<~>,tnl-(-onaiictoi /-\ line. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 designer's data sheet power field effect transistor p-channel enhancement-mode silicon gate this tmos power fet is designed for medium voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ? silicon gate for fast switching speeds ? switching times specified at 100c ? designer's data ? idss- vds(on)- vqs(th) and soa specified at elevated temperature ? rugged ? soa is power dissipation limited ? source-to-dram diode characterized for use with inductive loads maximum ratings MTM20P10 tmqs tmos power fet 20 amperes rds(on)= 0.15 ohm 100 volts rating drain-source voltage drain-gate voltage (rgs = 1 m?) gate-source voltage continuous non-repetitive (tp *", 50 ms) drain current continuous pulsed total power dissipation @ tc = 25c derate above 25c operating and storage temperature range symbol vdss vdgr vgs vgsm id 'dm pd tj- tsfg vilira 100 100 20 40 20 30 125 1 -65 to 150 unit vdc vdc vdc vpk adc watts wvc c thermal characteristics to-204aa thermal resistance junction to case junction to ambient maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds ?se tl i 30 300 ?c/w c nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
electrical characteristics (tc = 25c unless otherwise noted) characteristic symbol mln max unit off characteristics dram-source breakdown voltage (vgs - 0, id - 0.25 ma) zero gate voltage drain current (vds - rated vdss- vgs = 0) (vds = rated vdss' vgs - . tj = 125c) gate- body leakage current, forward (vgsf = 20 vdc, vds = 0) gate-body leakage current. reverse (vqsh = 20 vdc, vds = 0) v(br)dss toss 'gssf igssr 100 ? ? ? ? 10 100 100 100 vdc limc nadc nadc on characteristics* gate threshold voltage (vds = vgs- id - 1 ma) tj - 100c static dram-source on-resistance ivgs = 10 vdc, id = loadc) drain-source on-vortage (vgs = 10 v] (id = 20 adc) (id = 10 adc, tj = 100*c) forward tranaconductance (vds = iov, id = 10 a) vgs(th) "dsionl vds(on) 9fs 2 1.5 ? ? 5 4.5 a 0.15 3.2 3 ? vdc ohm vdc mhos dynamic characteristics input capacitance output capacitance reverse transfer capacitance {vds = 25 v, vqs - o. f = 1 mhz) see figure 10 ci$s cdss cr6s ? ? ? 2000 950 400 pf switching characteristics' (tj = 1qq-q turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge (vdd - 25 v, id = 0.5 rated id sea figures 12 and 13 (vds ~ -8 rated vdss> id = rated id, vgs - 10 v) see figure 1 1 'd(on) tr td(off) tf qfl q?s qgd ? ? ? ? 52 (typ) 22 (typ) 30 (typ) 45 200 150 150 75 ? ? ns nc source drain diode characteristics* forward on-voltage forward turn-on time reverse recovery time ds = rated id vnc - 0) vsd 'on ?rr 2.8 (typ) 100 (typ) 350 (typ) 4 ? ? vdc ns ns ?pulse ten: pulss width ? 300 ^s. duty cycle s 10%.
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